International Rectifier (IR) (Symbol:IRF--NYSE) is a pioneer and world leader in advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components. The world's leading manufacturers of computers, appliances, automobiles, consumer electronics and defense systems rely on IR technology to drive the performance and efficiency of their products. Today, power management technology plays a more important role than ever in saving the world's dwindling energy reserves while tackling tough technology roadblocks. IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

Multi-chip modules, like the iPOWIR™- intelligent scalable building blocks, simplify power design and boost performance for the latest generation of low-voltage processors in single- and multi-phase topologies. IR's expertise in device matching and "short trace" layout deliver this optimized solution that combines multiple power semiconductors, ICs, and passive components into a single BGA package.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

Power Management ICs
Thanks to the development of a unique high voltage (600 & 1200V), junction isolated BCDMOS fabrication process, IR produces one of the most capable lines of control, level shift, and gate drive ICs available on the market. These chips are used in designs requiring a high-current gate drive that needs to be level shifted from ground by more than a few volts.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223 More sophisticated ICs are now in development that include PWM control and high speed digital control and interface circuits. IR also has an NMOS/CMPS power IC process for SmartFETs and Intelligent Power Switches. These components combine the functionality of a power MOSFET with analog and digital circuitry on a single chip. These two technologies have enabled key circuits in advanced high density power converters, motor controllers, and automotive electronics, now on the market. IR recently added Low Drop-Out voltage regulators and switching controllers to its product line to meet the rapidly evolving needs of DC-DC power management in the information technology equipment market.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

IGBTs
IR manufactures a wide range of IGBTs (Insulated Gate Bipolar Transistors)- voltage controlled power transistors used to provide the basic output function in power conversion systems.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223 They have become the preferred output solution in almost all high voltage, high current, moderate frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs, and are faster with superior drive and output characteristics than comparable power bipolar transistors. In 1999, IR introduced NPT technology for IGBT reducing power losses by 20% and significantly improving cost and manufacturability. In 2001, the family is expanding to include 600V devices.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™ and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages,IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223 increasing power density.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223 Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon to footprint ratio with the same performance as a conventional package 3 times as big making it the ideal solution for portable devices such as portable phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double current density while cutting thermal management cost in half in high current circuits that power next generation microprocessors.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

IR Introduces SOT-23 Power MOSFETs Product Family from -30V to 100V EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a family of HEXFET® power MOSFETs featuring ultra low on-state resistance (RDS(on)) in an industry-standard SOT-23 package for applications including battery charge and discharge switches, system and load switches, light load motor drives, and telecom equipment.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223

Utilizing IR’s latest mid-voltage silicon technology, the new SOT-23 MOSFET devices deliver a strong improvement in current handling by minimizing Rds(on) by as much as 90% to offer customers optimized performance and price for a given application.

 Micro-Electronic Relays(MERs)
IR's line of MERs include two capabilities: MOSFET- and IGBT-based photovoltaic relays and photovoltaic isolator products. The former are ideal solid-state relays for switching AC and DC loads and sensory signals from a few miliamps to several hundred watts in industrial controls, instrumentation, peripheral telecom devices, computer peripherals and office equipment. The latter offer single- and dual-channel, optically isolated outputs that can be used for directly driving the gates of discrete power MOSFETs and/or IGBTs, giving designers the flexibility of creating their own, custom-made solid-state relays capable of controlling loads well over 1,000 volts and 100 amps.IRLL2705TRPBF International Rectifier MOSFET N-CH 55V 3.8A SOT223