1 pcs
Mininum order quantity from 1PCS BBY 58-02W E6127
Mininum order value from 1USD
2 days
lead time of BBY 58-02W E6127 is from 2 to 5 days
12 hours
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60 days
60 days full quality warranty of BBY 58-02W E6127
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BBY 58-02W E6127 Infineon Technologies DIODE TUNING 10V 20MA SCD-80
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BBY 58-02W E6127 Infineon Technologies DIODE TUNING 10V 20MA SCD-80
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BBY 58-02W E6127 Infineon Technologies DIODE TUNING 10V 20MA SCD-80
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBBY 58-02W E6127 Infineon Technologies DIODE TUNING 10V 20MA SCD-80