1 pcs
Mininum order quantity from 1PCS STTH1R06U
Mininum order value from 1USD
2 days
lead time of STTH1R06U is from 2 to 5 days
12 hours
Fast quotation of STTH1R06U within 12 hours
60 days
60 days full quality warranty of STTH1R06U
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of STTH1R06U,like pictures ,package,datasheet and so on, pls email to [email protected]
Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF STTH1R06U STMicroelectronics (VA) DIODE TURBO2 600V 1A SMB
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.STTH1R06U STMicroelectronics (VA) DIODE TURBO2 600V 1A SMB
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 STTH1R06U STMicroelectronics (VA) DIODE TURBO2 600V 1A SMB
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFSTTH1R06U STMicroelectronics (VA) DIODE TURBO2 600V 1A SMB