1 pcs
Mininum order quantity from 1PCS SI7784DP-T1-GE3
Mininum order value from 1USD
2 days
lead time of SI7784DP-T1-GE3 is from 2 to 5 days
12 hours
Fast quotation of SI7784DP-T1-GE3 within 12 hours
60 days
60 days full quality warranty of SI7784DP-T1-GE3
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of SI7784DP-T1-GE3,like pictures ,package,datasheet and so on, pls email to [email protected]
Features
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V SI7784DP-T1-GE3 Vishay/Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model SI7784DP-T1-GE3 Vishay/Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
• Tight Tolerance Series Available (See Page 4)
• Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable ModelId$ Vishay/Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0 ModelId$ Vishay/Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC