1 pcs
Mininum order quantity from 1PCS RFD3055SM9A
Mininum order value from 1USD
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lead time of RFD3055SM9A is from 2 to 5 days
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60 days
60 days full quality warranty of RFD3055SM9A
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF RFD3055SM9A Fairchild Semiconductor MOSFET N-CH 60V 12A DPAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.RFD3055SM9A Fairchild Semiconductor MOSFET N-CH 60V 12A DPAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 RFD3055SM9A Fairchild Semiconductor MOSFET N-CH 60V 12A DPAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFRFD3055SM9A Fairchild Semiconductor MOSFET N-CH 60V 12A DPAK