1 pcs
Mininum order quantity from 1PCS NTTFS5820NLTWG
Mininum order value from 1USD
2 days
lead time of NTTFS5820NLTWG is from 2 to 5 days
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60 days
60 days full quality warranty of NTTFS5820NLTWG
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF NTTFS5820NLTWG ON Semiconductor MOSFET N-CH 60V 37A 8DFN
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.NTTFS5820NLTWG ON Semiconductor MOSFET N-CH 60V 37A 8DFN
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 NTTFS5820NLTWG ON Semiconductor MOSFET N-CH 60V 37A 8DFN
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFNTTFS5820NLTWG ON Semiconductor MOSFET N-CH 60V 37A 8DFN