1 pcs
Mininum order quantity from 1PCS 2N7002PV,115
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60 days
60 days full quality warranty of 2N7002PV,115
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF 2N7002PV,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-666
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.2N7002PV,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-666
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 2N7002PV,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-666
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF2N7002PV,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-666