1 pcs
Mininum order quantity from 1PCS BG 3123R H6327
Mininum order value from 1USD
2 days
lead time of BG 3123R H6327 is from 2 to 5 days
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60 days
60 days full quality warranty of BG 3123R H6327
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BG 3123R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BG 3123R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BG 3123R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBG 3123R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363