1 pcs
Mininum order quantity from 1PCS FDMJ1027P
Mininum order value from 1USD
2 days
lead time of FDMJ1027P is from 2 to 5 days
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60 days
60 days full quality warranty of FDMJ1027P
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF FDMJ1027P Fairchild Semiconductor MOSFET P-CH 20V 3.2A
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.FDMJ1027P Fairchild Semiconductor MOSFET P-CH 20V 3.2A
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 FDMJ1027P Fairchild Semiconductor MOSFET P-CH 20V 3.2A
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFFDMJ1027P Fairchild Semiconductor MOSFET P-CH 20V 3.2A