1 pcs
Mininum order quantity from 1PCS BSZ180P03NS3 G
Mininum order value from 1USD
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BSZ180P03NS3 G Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BSZ180P03NS3 G Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BSZ180P03NS3 G Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBSZ180P03NS3 G Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8