1 pcs
Mininum order quantity from 1PCS HAF1002-90STL-E
Mininum order value from 1USD
2 days
lead time of HAF1002-90STL-E is from 2 to 5 days
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF HAF1002-90STL-E Renesas Electronics America MOSFET P-CH 60V 15A 4LDPAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.HAF1002-90STL-E Renesas Electronics America MOSFET P-CH 60V 15A 4LDPAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 HAF1002-90STL-E Renesas Electronics America MOSFET P-CH 60V 15A 4LDPAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFHAF1002-90STL-E Renesas Electronics America MOSFET P-CH 60V 15A 4LDPAK