1 pcs
Mininum order quantity from 1PCS SI8429DB-T1-E1
Mininum order value from 1USD
2 days
lead time of SI8429DB-T1-E1 is from 2 to 5 days
12 hours
Fast quotation of SI8429DB-T1-E1 within 12 hours
60 days
60 days full quality warranty of SI8429DB-T1-E1
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF SI8429DB-T1-E1 Vishay/Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.SI8429DB-T1-E1 Vishay/Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 SI8429DB-T1-E1 Vishay/Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFSI8429DB-T1-E1 Vishay/Siliconix MOSFET P-CH 8V 11.7A 2X2 4-MFP