1 pcs
Mininum order quantity from 1PCS NTLJD3181PZTAG
Mininum order value from 1USD
2 days
lead time of NTLJD3181PZTAG is from 2 to 5 days
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Fast quotation of NTLJD3181PZTAG within 12 hours
60 days
60 days full quality warranty of NTLJD3181PZTAG
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF NTLJD3181PZTAG ON Semiconductor MOSFET P-CH DUAL 20V 4A 6WDFN
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.NTLJD3181PZTAG ON Semiconductor MOSFET P-CH DUAL 20V 4A 6WDFN
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 NTLJD3181PZTAG ON Semiconductor MOSFET P-CH DUAL 20V 4A 6WDFN
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFNTLJD3181PZTAG ON Semiconductor MOSFET P-CH DUAL 20V 4A 6WDFN