1 pcs
Mininum order quantity from 1PCS MUN5335DW1T2G
Mininum order value from 1USD
2 days
lead time of MUN5335DW1T2G is from 2 to 5 days
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MUN5335DW1T2G ON Semiconductor TRANS BRT NPN/PNP 50V SC88-6
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MUN5335DW1T2G ON Semiconductor TRANS BRT NPN/PNP 50V SC88-6
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MUN5335DW1T2G ON Semiconductor TRANS BRT NPN/PNP 50V SC88-6
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMUN5335DW1T2G ON Semiconductor TRANS BRT NPN/PNP 50V SC88-6