1 pcs
Mininum order quantity from 1PCS MMBTA05LT1G
Mininum order value from 1USD
2 days
lead time of MMBTA05LT1G is from 2 to 5 days
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Fast quotation of MMBTA05LT1G within 12 hours
60 days
60 days full quality warranty of MMBTA05LT1G
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MMBTA05LT1G ON Semiconductor (VA) TRANS DRIVER SS NPN 60V SOT23
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MMBTA05LT1G ON Semiconductor (VA) TRANS DRIVER SS NPN 60V SOT23
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MMBTA05LT1G ON Semiconductor (VA) TRANS DRIVER SS NPN 60V SOT23
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMMBTA05LT1G ON Semiconductor (VA) TRANS DRIVER SS NPN 60V SOT23