1 pcs
Mininum order quantity from 1PCS MBT3906DW1T1
Mininum order value from 1USD
2 days
lead time of MBT3906DW1T1 is from 2 to 5 days
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Fast quotation of MBT3906DW1T1 within 12 hours
60 days
60 days full quality warranty of MBT3906DW1T1
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MBT3906DW1T1 ON Semiconductor (VA) TRANS DUAL GP 200MA 40V SOT363
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MBT3906DW1T1 ON Semiconductor (VA) TRANS DUAL GP 200MA 40V SOT363
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MBT3906DW1T1 ON Semiconductor (VA) TRANS DUAL GP 200MA 40V SOT363
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMBT3906DW1T1 ON Semiconductor (VA) TRANS DUAL GP 200MA 40V SOT363