1 pcs
Mininum order quantity from 1PCS BCM857DS,135
Mininum order value from 1USD
2 days
lead time of BCM857DS,135 is from 2 to 5 days
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60 days
60 days full quality warranty of BCM857DS,135
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BCM857DS,135 NXP Semiconductors TRANS PNP/PNP 45V 100MA SC74
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BCM857DS,135 NXP Semiconductors TRANS PNP/PNP 45V 100MA SC74
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BCM857DS,135 NXP Semiconductors TRANS PNP/PNP 45V 100MA SC74
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBCM857DS,135 NXP Semiconductors TRANS PNP/PNP 45V 100MA SC74