1 pcs
Mininum order quantity from 1PCS BTA316B-800E,118
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2 days
lead time of BTA316B-800E,118 is from 2 to 5 days
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BTA316B-800E,118 NXP Semiconductors TRIAC 800V 16A D2PAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BTA316B-800E,118 NXP Semiconductors TRIAC 800V 16A D2PAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BTA316B-800E,118 NXP Semiconductors TRIAC 800V 16A D2PAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBTA316B-800E,118 NXP Semiconductors TRIAC 800V 16A D2PAK