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Mininum order quantity from 1PCS 3N259-E4/51
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lead time of 3N259-E4/51 is from 2 to 5 days
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60 days
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1, we will give you new and original parts with factory sealed package
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first proposed by Julius Edgar Lilienfeld in 1925.3N259-E4/51 Vishay/General Semiconductor DIODE BRIDGE 2A 1000V 4SIP In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.3N259-E4/51 Vishay/General Semiconductor DIODE BRIDGE 2A 1000V 4SIP
Diode
In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals.[1] A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.3N259-E4/51 Vishay/General Semiconductor DIODE BRIDGE 2A 1000V 4SIP