1 pcs
Mininum order quantity from 1PCS SIDC23D120H6
Mininum order value from 1USD
2 days
lead time of SIDC23D120H6 is from 2 to 5 days
12 hours
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60 days
60 days full quality warranty of SIDC23D120H6
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first proposed by Julius Edgar Lilienfeld in 1925.SIDC23D120H6 Infineon Technologies DIODE FAST SW 1200V 35A WAFER In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.SIDC23D120H6 Infineon Technologies DIODE FAST SW 1200V 35A WAFER
Diode
In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals.[1] A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.SIDC23D120H6 Infineon Technologies DIODE FAST SW 1200V 35A WAFER