1 pcs
Mininum order quantity from 1PCS 1N6483HE3/97
Mininum order value from 1USD
2 days
lead time of 1N6483HE3/97 is from 2 to 5 days
12 hours
Fast quotation of 1N6483HE3/97 within 12 hours
60 days
60 days full quality warranty of 1N6483HE3/97
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of 1N6483HE3/97,like pictures ,package,datasheet and so on, pls email to [email protected]
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first proposed by Julius Edgar Lilienfeld in 1925.1N6483HE3/97 Vishay/General Semiconductor DIODE GPP 1A 800V DO-213AB In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.1N6483HE3/97 Vishay/General Semiconductor DIODE GPP 1A 800V DO-213AB
Diode
In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals.[1] A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.1N6483HE3/97 Vishay/General Semiconductor DIODE GPP 1A 800V DO-213AB