1 pcs
Mininum order quantity from 1PCS EGP30B-TP
Mininum order value from 1USD
2 days
lead time of EGP30B-TP is from 2 to 5 days
12 hours
Fast quotation of EGP30B-TP within 12 hours
60 days
60 days full quality warranty of EGP30B-TP
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of EGP30B-TP,like pictures ,package,datasheet and so on, pls email to [email protected]
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. The basic principle of this kind of transistor was first proposed by Julius Edgar Lilienfeld in 1925.EGP30B-TP Micro Commercial Co (VA) DIODE GPP 3A 100V HI EFF DO201AE In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type (see article on semiconductor devices), and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.EGP30B-TP Micro Commercial Co (VA) DIODE GPP 3A 100V HI EFF DO201AE
Diode
In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals.[1] A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.EGP30B-TP Micro Commercial Co (VA) DIODE GPP 3A 100V HI EFF DO201AE