1 pcs
Mininum order quantity from 1PCS TK70D06J1(Q)
Mininum order value from 1USD
2 days
lead time of TK70D06J1(Q) is from 2 to 5 days
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60 days
60 days full quality warranty of TK70D06J1(Q)
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF TK70D06J1(Q) Toshiba MOSFET N-CH 60V 70A 2-10V1A
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.TK70D06J1(Q) Toshiba MOSFET N-CH 60V 70A 2-10V1A
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 TK70D06J1(Q) Toshiba MOSFET N-CH 60V 70A 2-10V1A
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFTK70D06J1(Q) Toshiba MOSFET N-CH 60V 70A 2-10V1A