1 pcs
Mininum order quantity from 1PCS BLD6G21L-50,112
Mininum order value from 1USD
2 days
lead time of BLD6G21L-50,112 is from 2 to 5 days
12 hours
Fast quotation of BLD6G21L-50,112 within 12 hours
60 days
60 days full quality warranty of BLD6G21L-50,112
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BLD6G21L-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BLD6G21L-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BLD6G21L-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBLD6G21L-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113