SAN JOSE, Calif.--"As long as the insatiable thirst for memory exists, we will always continue to beat Moores Law," said Ramin Ghodsi, Micron Technology Inc.'s senior director of NAND development, at an award ceremony naming Intel Corp. and Micron's 20-nm NAND flash the Semiconductor of the Year.
Intel and Micron were selected by UBM TechInsights in its 10th annual Insight Awards for their joint development project to create 20-nm NAND flash technology, thought to represent a big breakthrough in terms of storage for consumer and compute applications.
The high-capacity, multilevel cell (MLC) NAND made on the 20-nm process is already in volume production and is ready to slot straight in to solid-state drives (SSDs),smartphones, tablets, computers, e-book readers and much more besides.
Micron and Intel's20-nm MLC NAND flash, manufactured by their IM Flash Technologies joint venture, was the first to be manufactured at the 20-nm process node and further impressed by replacing the traditional silicon dioxide gate with a high-k dielectric, allowing for reduced cell leakage and low power consumption.
Glen Hawk, vice president of Micron's NAND solutions group, told
EE Times that winning the award was "an incredible honor" and capped off what he felt to be one of the industry's best partnerships.
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