Lfoundry announces 110-nm PDK with embedded flash

Lfoundry announces 110-nm PDK with embedded flash


LONDON – Lfoundry Rousset SAS has announced the availability of its physical design kit (PDK) for 110-nm aluminum process. The PDK includes options including an embedded flash memory which is proposed in 90-nm resolution.

Lfoundry Rousset (Rousset, France) was formed in 2009 by the sale of a wafer fab in Rousset by Atmel Corp. to Lfoundry GmbH which was based around a former Hitachi wafer fab in Landshut, Germany. The company was forced to close the Landshut fab and restructure in 2011 (see Lfoundry continues based on Rousset fab).

Since its formation in June 2009 Lfoundry Rousset has been developing technologies targeted at added value applications such as smartcard, defense and aerospace, automotive and energy management. A development team at what became a subisidiary company, Lfoundry Technologies GmbH located in Germany, has been working on developing process technologies, PDKs and providing engineering services.

"With the release of our PDK 110 flash, our customers can design innovative and competitive solutions which will be produced in volume in our Rousset facility. This PDK is particularly well adapted for key applications such as digital security and CMOS imagery," said Jean-Pierre Delesse, president of LFoundry Rousset, in a statement.


Related links and articles:

www.lfoundry.com

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