SAN FRANCISCO—SanDisk Corp. said Monday (June 4) it is now building its iNAND Extreme NAND flash memory using 19-nm process technology, the most advanced process technology in use today for memory chips.
In February, SanDisk provided details of its NAND flash implemented at 19-nm at the International Solid State Circuits Conference here.
SanDisk (Milpitas, Calif.) said Monday its 19-nm process technology is being used to enable large-capacity, high-performance embedded NAND devices that are suited for high-end tablets and smartphones.
SanDisk said its iNAND Extreme will be used on reference designs for the Nvidia Tegra 3 4-Plus-1 quad-core processor as a recommended high-performance storage device for high-end tablet and mobile devices using the latest operating systems.
"SanDisk is a key partner for us in showcasing Tegra 3's capabilities,” said Rene Haas, general manager of notebook products at Nvidia, in a statement. "Just as Tegra delivers great performance and battery life in a wide range of mobile devices, iNAND Extreme provides a high performance memory solution to help create a world-class user experience for tablets and mobile devices."
SanDisk’s 128 GB iNAND Extreme comes in a 12-mm by 16-mm package and conforms to the e.MMC 4.5 specification, SanDisk said. It can achieve up to 45-megabyte per second sequential write and 100 MB/sec read speeds, the firm said. Samples of the latest version of iNAND Extreme will be available to customers this month with general availability this summer, SanDisk said.