1 pcs
Mininum order quantity from 1PCS FFA10U120DNTU
Mininum order value from 1USD
2 days
lead time of FFA10U120DNTU is from 2 to 5 days
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60 days
60 days full quality warranty of FFA10U120DNTU
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF FFA10U120DNTU Fairchild Semiconductor DIODE ULTRA FAST 1200V 10A TO-3P
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.FFA10U120DNTU Fairchild Semiconductor DIODE ULTRA FAST 1200V 10A TO-3P
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 FFA10U120DNTU Fairchild Semiconductor DIODE ULTRA FAST 1200V 10A TO-3P
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFFFA10U120DNTU Fairchild Semiconductor DIODE ULTRA FAST 1200V 10A TO-3P