1 pcs
Mininum order quantity from 1PCS NTD5865NL-1G
Mininum order value from 1USD
2 days
lead time of NTD5865NL-1G is from 2 to 5 days
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60 days
60 days full quality warranty of NTD5865NL-1G
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF NTD5865NL-1G ON Semiconductor MOSFET N-CH 60V 34A 18MOHM IPAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.NTD5865NL-1G ON Semiconductor MOSFET N-CH 60V 34A 18MOHM IPAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 NTD5865NL-1G ON Semiconductor MOSFET N-CH 60V 34A 18MOHM IPAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFNTD5865NL-1G ON Semiconductor MOSFET N-CH 60V 34A 18MOHM IPAK