1 pcs
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Mininum order value from 1USD
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF IPP60R165CP Infineon Technologies MOSFET N-CH 650V 21A TO-220
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.IPP60R165CP Infineon Technologies MOSFET N-CH 650V 21A TO-220
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 IPP60R165CP Infineon Technologies MOSFET N-CH 650V 21A TO-220
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFIPP60R165CP Infineon Technologies MOSFET N-CH 650V 21A TO-220