1 pcs
Mininum order quantity from 1PCS PMN38EN,165
Mininum order value from 1USD
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lead time of PMN38EN,165 is from 2 to 5 days
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60 days
60 days full quality warranty of PMN38EN,165
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF PMN38EN,165 NXP Semiconductors MOSFET N-CH FET 30V 5.4A SOT457
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.PMN38EN,165 NXP Semiconductors MOSFET N-CH FET 30V 5.4A SOT457
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 PMN38EN,165 NXP Semiconductors MOSFET N-CH FET 30V 5.4A SOT457
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFPMN38EN,165 NXP Semiconductors MOSFET N-CH FET 30V 5.4A SOT457