1 pcs
Mininum order quantity from 1PCS NTD5862N-1G
Mininum order value from 1USD
2 days
lead time of NTD5862N-1G is from 2 to 5 days
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60 days
60 days full quality warranty of NTD5862N-1G
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF NTD5862N-1G ON Semiconductor NFET 60V 102A 6MOHM DPAK3
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.NTD5862N-1G ON Semiconductor NFET 60V 102A 6MOHM DPAK3
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 NTD5862N-1G ON Semiconductor NFET 60V 102A 6MOHM DPAK3
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFNTD5862N-1G ON Semiconductor NFET 60V 102A 6MOHM DPAK3