1 pcs
Mininum order quantity from 1PCS NSBC123EDXV6T1G
Mininum order value from 1USD
2 days
lead time of NSBC123EDXV6T1G is from 2 to 5 days
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60 days
60 days full quality warranty of NSBC123EDXV6T1G
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF NSBC123EDXV6T1G ON Semiconductor TRANS BRT NPN DUAL 50V SOT563
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.NSBC123EDXV6T1G ON Semiconductor TRANS BRT NPN DUAL 50V SOT563
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 NSBC123EDXV6T1G ON Semiconductor TRANS BRT NPN DUAL 50V SOT563
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFNSBC123EDXV6T1G ON Semiconductor TRANS BRT NPN DUAL 50V SOT563