1 pcs
Mininum order quantity from 1PCS MJD112-1G
Mininum order value from 1USD
2 days
lead time of MJD112-1G is from 2 to 5 days
12 hours
Fast quotation of MJD112-1G within 12 hours
60 days
60 days full quality warranty of MJD112-1G
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of MJD112-1G,like pictures ,package,datasheet and so on, pls email to [email protected]
Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MJD112-1G ON Semiconductor TRANS DARL NPN 2A 100V STR DPAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MJD112-1G ON Semiconductor TRANS DARL NPN 2A 100V STR DPAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MJD112-1G ON Semiconductor TRANS DARL NPN 2A 100V STR DPAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMJD112-1G ON Semiconductor TRANS DARL NPN 2A 100V STR DPAK