1 pcs
Mininum order quantity from 1PCS BT136S-600E,118
Mininum order value from 1USD
2 days
lead time of BT136S-600E,118 is from 2 to 5 days
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60 days
60 days full quality warranty of BT136S-600E,118
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BT136S-600E,118 NXP Semiconductors (VA) TRIAC 600V 4A DPAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BT136S-600E,118 NXP Semiconductors (VA) TRIAC 600V 4A DPAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BT136S-600E,118 NXP Semiconductors (VA) TRIAC 600V 4A DPAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBT136S-600E,118 NXP Semiconductors (VA) TRIAC 600V 4A DPAK